The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

May. 15, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kam-Tou Sio, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Charles Chew-Yuen Young, Hsinchu, TW;

Hui-Zhong Zhuang, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Yi-Hsun Chiu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/82 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 84/90 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10D 84/82 (2025.01); H10D 84/85 (2025.01); H10D 84/90 (2025.01); H10D 84/907 (2025.01); H10D 89/10 (2025.01); H10D 84/0186 (2025.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01); H10D 84/991 (2025.01);
Abstract

A method of forming an integrated circuit structure includes generating a first well layout pattern corresponding to fabricating a first well in the integrated circuit structure. The generating the first well layout pattern includes generating a first layout pattern having a first width, and corresponding to fabricating a first portion of the first well, and generating a second layout pattern having a second width and corresponding to fabricating a second portion of the first well. The method further includes generating a first implant layout pattern having a third width and corresponding to fabricating a first set of implants in the first portion of the first well, generating a second implant layout pattern having a fourth width and corresponding to fabricating a second set of implants in the second portion of the first well, and manufacturing the integrated circuit structure based on the above layout patterns.


Find Patent Forward Citations

Sio, Kam-Tou. (2026). Integrated circuit structure and method of forming the same (U.S. Patent No. 12672344). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12672344

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…