The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Aug. 18, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Shiang Huang, Hsinchu City, TW;

Yen-Ting Chen, Taichung, TW;

Wei-Yang Lee, Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/122 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/151 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 84/013 (2025.01); H10D 84/0135 (2025.01); H10D 84/0147 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of nanostructures formed over a substrate, and an inner spacer layer between two adjacent nanostructures. The semiconductor structure includes a source/drain (S/D) structure formed adjacent to the inner spacer layer, and a barrier layer adjacent to the inner spacer layer. The barrier layer extends from the first position to the second position, and the first position is between the inner spacer layer and the nanostructure, and the second position is between the nanostructures and the S/D structure.


Find Patent Forward Citations

Huang, Yu-Shiang. (2026). Semiconductor structure and method for forming the same (U.S. Patent No. 12672326). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12672326

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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