The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Dec. 09, 2022
International Business Machines Corporation, Armonk, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Tao Li, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Reinaldo Vega, Mahopac, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
One or more devices and/or methods provided herein relate to a method for fabricating a semiconductor device, and more particularly for fabricating at least a portion of a vertical transport field effect transistor. The semiconductor device comprises a field-effect transmitter comprising a substrate, a fin extending outwardly from the substrate, a source/drain region having a first portion disposed between the substrate and the fin and stacked with the fin and the substrate along a common extension direction of the fin, and an excess section of semiconductor material disposed adjacent the first portion of the source/drain region and positioned other than stacked together with the substrate and the fin, wherein the semiconductor material of the excess section is different from a material of the fin and different from a material of the source/drain region.