The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Mar. 25, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory circuit includes a plurality of memory cells, each memory cell of the plurality of memory cells including a gate electrode, a ferroelectric layer adjacent to the gate electrode, a channel layer adjacent to the ferroelectric layer, the channel layer including indium gallium zinc oxide (IGZO), and source and drain contacts adjacent to the channel layer opposite the ferroelectric layer. The memory circuit is configured to, during write operations to a memory cell of the plurality of memory cells, apply a plurality of voltage levels to the gate electrode relative to a ground voltage level applied to the source and drain contacts, a first voltage level of the plurality of voltage levels has a positive polarity and a first magnitude, and a second voltage level of the plurality of voltage levels has a negative polarity and a second magnitude greater than the first magnitude.