The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Sep. 21, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Ryota Yonezawa, Albany, NY (US);

Kai-Hung Yu, Albany, NY (US);

Ying Trickett, Albany, NY (US);

Hidenao Suzuki, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10P 14/692 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/057 (2026.01); H10P 14/69215 (2026.01); H10W 20/0523 (2026.01); H10W 20/089 (2026.01); H10W 20/096 (2026.01); H10W 20/425 (2026.01);
Abstract

A method of processing a substrate includes exposing the substrate to a boron-containing precursor to adsorb over the substrate, where the substrate includes a dielectric layer formed over a conductive layer, and the conductive layer is exposed at a bottom of a recess formed in the dielectric layer. The method includes exposing the adsorbed boron-containing precursor to a plasma and filling the recess with a conductive fill material bottom up by a vapor deposition process, where a vertical deposition rate of the conductive fill material is greater than a lateral deposition rate of the conductive fill material.


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