The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Nov. 16, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Du Zhang, Albany, NY (US);

Yu-Hao Tsai, Albany, NY (US);

Mingmei Wang, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 50/24 (2026.01); H10P 14/60 (2026.01); H10P 14/68 (2026.01);
U.S. Cl.
CPC ...
H10P 50/244 (2026.01); H10P 14/6319 (2026.01); H10P 14/6336 (2026.01); H10P 14/6532 (2026.01); H10P 14/683 (2026.01);
Abstract

A method for processing a substrate that includes: performing a cyclic process including a plurality of cycles, where the cyclic process includes, forming a carbon-containing layer over sidewalls of a recess in a Si-containing dielectric layer of the substrate, the forming including exposing the substrate disposed in a plasma processing chamber to a first plasma generated from a first gas including carbon and hydrogen, modifying a surface of the carbon-containing layer by exposing the substrate to a second plasma generated from a second gas including oxygen, and forming a passivation layer over the modified surface of the carbon-containing layer by exposing the substrate to a third gas including B, Si, or Al.


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