The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jun. 06, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yung-Chin Hou, Hsinchu, TW;
Lee-Chung Lu, Hsinchu, TW;
Yi-Kan Cheng, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
Wei-Cheng Lin, Hsinchu, TW;
Ching-Yu Huang, Hsinchu, TW;
Chun-Yen Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An integrated circuit (IC) device includes a bottom semiconductor device, a top semiconductor device over the bottom semiconductor device in a thickness direction of the IC device, and a multilayer structure between the bottom semiconductor device and the top semiconductor device in the thickness direction. The multilayer structure includes a lower dielectric layer over the bottom semiconductor device, an upper dielectric layer over the lower dielectric layer, and an interlayer metal structure between the lower dielectric layer and the upper dielectric layer. The interlayer metal structure is electrically coupled to at least one of the bottom semiconductor device or the top semiconductor device.