The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jun. 04, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ming-Yuan Wu, Hsinchu City, TW;

Min Jiao, Taichung City, TW;

Da-Wen Lin, Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10B 10/00 (2023.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10B 10/125 (2023.02); H10D 30/6713 (2025.01); H10D 30/6733 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01); H10D 64/017 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01);
Abstract

The present disclosure provides a method that includes providing a substrate including a first circuit region and a second circuit region; forming a semiconductor stack on the substrate, wherein the semiconductor stack includes first semiconductor layers of a first composition and second semiconductor layers of a second composition alternatively stacked on the substrate; performing a first patterning process to the semiconductor stack and the substrate to form first trenches having a first depth; and performing a second patterning process to the semiconductor stack and the substrate, thereby forming second trenches of a second depth in the first circuit region and third trenches of a third depth in the second circuit region, the third depth being less than the second depth.


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