The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Nov. 09, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Eric Chih-Fang Liu, Albany, NY (US);
David L. O'meara, Albany, NY (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/20 (2026.01); H10P 50/00 (2026.01); H10P 50/28 (2026.01); H10P 76/20 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10P 76/405 (2026.01); H10P 50/283 (2026.01); H10P 50/73 (2026.01); H10P 76/20 (2026.01); H10P 76/4085 (2026.01);
Abstract
A method of forming a semiconductor structure includes forming a first mandrel layer over a target layer, forming a second mandrel layer over the first mandrel layer, and patterning a mandrel by etching the second mandrel layer and the first mandrel layer. The first mandrel layer has a first etch rate and the second mandrel layer has a second etch rate less than the first etch rate.