The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Aug. 10, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Hao Chen, Hsinchu, TW;

Hui Yu Lee, Hsinchu, TW;

Jui-Feng Kuan, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 10/17 (2023.01); H10N 10/01 (2023.01); H10N 10/80 (2023.01); H10W 40/28 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10N 10/17 (2023.02); H10N 10/01 (2023.02); H10N 10/80 (2023.02); H10W 40/28 (2026.01); H10W 90/00 (2026.01);
Abstract

A method of manufacturing a semiconductor structure includes forming a first dielectric layer surrounding an optical component. The method further includes forming a thermal control mechanism adjacent to the optical component and at least partially surrounded by the first dielectric layer. Forming the thermal control mechanism includes forming a first thermoelectric member having a first conductivity type, forming a second thermoelectric member having a second conductivity type opposite to the first conductivity type, wherein the second thermoelectric member is opposite to the first thermoelectric member; and forming a conductive structure over and electrically connected to the thermal control mechanism. The method further includes forming a second dielectric layer over the first dielectric layer and surrounding the conductive structure.


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