The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Sep. 27, 2021
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Nicolas Loubet, Guilderland, NY (US);
Sagarika Mukesh, Albany, NY (US);
Prasad Bhosale, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Andrew Herbert Simon, Fishkill, NY (US);
Takeshi Nogami, Schenectady, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
Roy R. Yu, Poughkeepsie, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Daniel Charles Edelstein, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a substrate and a first field effect transistor (FET) formed on the substrate; the first FET includes a first FET first source-drain region, a first FET second source-drain region, a first FET gate between the first and second source-drain regions, and a first FET channel region adjacent the first FET gate and between the first FET first and second source-drain regions. Also included is a buried power rail, buried in the substrate, having a top at a level lower than the first FET channel region, and having buried power rail sidewalls. A first FET shared contact is electrically interconnected with the buried power rail and the first FET second source-drain region, and a first FET electrically isolating region is adjacent the buried power rail sidewalls and separates the buried power rail from the substrate.