The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Mar. 01, 2024
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Keren J. Kanarik, Los Altos, CA (US);
Samantha Siamhwa Tan, Newark, CA (US);
Yang Pan, Los Altos, CA (US);
Jeffrey Marks, Saratoga, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 72/00 (2026.01); H10P 72/72 (2026.01);
U.S. Cl.
CPC ...
H10P 72/0421 (2026.01); H10P 72/0434 (2026.01); H10P 72/722 (2026.01);
Abstract
A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below −20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.