The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Apr. 28, 2023
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Dongyu Fan, Wuhan, CN;
Dongxue Zhao, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Wei Liu, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Three-dimensional (3D) memory devices and fabricating methods are disclosed. A disclosed 3D memory device includes a first semiconductor structure. The first semiconductor structure includes an array of first-type through stack structures in a first region and an array of second-type through stack structures in a second region, and a slit structure separating the array of first-type through stack structures from the array of second-type through stack structures. The 3D memory device further includes a second semiconductor structure. The second semiconductor structure includes a first periphery circuit and a second periphery circuit at different levels. The second semiconductor structure and the first semiconductor structure are bonded together, such that the first periphery circuit is located between the second periphery circuit and the first semiconductor structure.