The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jun. 25, 2020
Lam Research Corporation, Fremont, CA (US);
Daniel Peter, Sunnyvale, CA (US);
Da Li, Newark, CA (US);
Timothy William Weidman, Sunnyvale, CA (US);
Boris Volosskiy, San Jose, CA (US);
Chenghao Wu, Berkeley, CA (US);
Katie Lynn Nardi, San Jose, CA (US);
Kevin Li Gu, Mountain View, CA (US);
Leon Taleh, San Jose, CA (US);
Samantha Siamhwa Tan, Newark, CA (US);
Jengyi Yu, San Ramon, CA (US);
Meng Xue, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, baking, development, or etch operations. An in situ dry chamber clean may be performed to remove the unintended metal-containing photoresist material by exposure to an etch gas. The dry chamber clean may be performed at elevated temperatures without striking a plasma. In some embodiments, the dry chamber clean may include pumping/purging and conditioning operations.