The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Apr. 14, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ching-Yu Chang, Yilang County, TW;
An-Ren Zi, Hsinchu City, TW;
Yuan Chih Lo, Hsinchu City, TW;
Shi-Cheng Wang, Tainan City, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/38 (2006.01); G03F 7/004 (2006.01); H10P 50/00 (2026.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01); G03F 7/0042 (2013.01); H10P 50/71 (2026.01); H10P 50/73 (2026.01); H10P 76/2041 (2026.01);
Abstract
A method includes the following steps. A target layer is formed on a substrate. A resist layer is formed on the target layer. The resist layer is exposed such that secondary electrons are produced in the resist layer. The secondary electrons are terminated using an additive. The resist layer is developed. The target layer is etched using the developed resist layer as a mask.