The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jul. 25, 2023
Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, TW;
Jui Shen Chang, Taichung, TW;
Li-Hsien Huang, Zhubei, TW;
Chen-Nan Chiu, Hsinchu, TW;
Yao-Chun Chuang, Hsinchu, TW;
Yinlung Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A passive device of a semiconductor substrate and method of making same. The passive device includes first and second top metal components on a substrate core having an insulator substrate. A passivation layer is formed over the top metal components and insulator substrate. A first conductive component is formed on the passivation layer electrically contacting the first top metal component, as well as a second conductive component that is formed on the passivation layer and electrically contacts the second top metal component. In addition, the device includes an insulator material that is formed over the first conductive component and the second conductive component. A cavity is defined by the insulator material between the first conductive component and the second conductive component. The device further includes an ABF plug component that is formed in the cavity between the first conductive component and the second conductive component.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile