The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Aug. 08, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Wei Chang, Taipei City, TW;
Shahaji B. More, Hsinchu, TW;
Chi-Yu Chou, Hsinchu, TW;
Yueh-Ching Pai, Taichung City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes one or more semiconductor layers, an interfacial layer surrounding at least one semiconductor layer of the one or more semiconductor layers, a work function metal disposed over the interfacial layer, and a high-K (HK) dielectric layer disposed between the interfacial layer and the work function metal. The HK dielectric layer includes a first dopant region adjacent to a first interface of the HK dielectric layer and the interfacial layer, wherein the first dopant region comprises first dopants having a first polarity. The HK dielectric layer also includes a second dopant region adjacent to a second interface of the HK dielectric layer and the work function metal, wherein the second dopant region comprises second dopants having a second polarity opposite the first polarity.