The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jul. 04, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ren-Guan Duan, Hsinchu, TW;
Chen-Hsiang Lu, Hsinchu, TW;
Chiun-Da Shiue, Hsinchu, TW;
Chih-Kai Hu, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes: forming a first coating comprising amorphous rare earth metal-containing oxide directly on a surface of an article using a first atomic layer deposition (ALD) process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N1 times, the first coating characterized by a first thickness; forming a second coating comprising crystalline rare earth metal oxide on the first coating using a second ALD process, the second coating characterized by a second thickness; forming a third coating comprising amorphous rare earth metal-containing oxide on the second coating using a third ALD process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N2 times, the third coating characterized by a third thickness; and forming a fourth coating comprising crystalline rare earth metal oxide on the third coating using a fourth ALD process.