The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Sep. 21, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Tai Chen, Hsinchu, TW;

Jing-Ran Lin, Hsinchu, TW;

Jer-Shien Yang, Hsinchu, TW;

Hung-Wen Chen, Hsinchu, TW;

I-Ling Kuo, Hsinchu, TW;

Yu-Hsun Chiang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); C23C 14/52 (2006.01); C23C 16/44 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H10P 72/0604 (2026.01); C23C 14/52 (2013.01); C23C 16/4401 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01J 37/32972 (2013.01); H10P 72/0616 (2026.01); H01J 2237/334 (2013.01); H10P 72/0421 (2026.01);
Abstract

The present disclosure provides a system and method for predicting wafer fabrication defects resulting from plasma processing of wafers in a plasma processing chamber. The system and method include processing electromagnetic signals emitted from residual compounds peeled from the chamber walls during the plasma processing of the wafers to indirectly determine the likelihood that the wafers are incurring fabrication processing defects during the plasma processing.


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