The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jun. 24, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Ayan Kar, Portland, OR (US);

Kalyan Kolluru, Portland, OR (US);

Nicholas Thomson, Hillsboro, OR (US);

Rui MA, Portland, OR (US);

Benjamin Orr, Portland, OR (US);

Nathan Jack, Forest Grove, OR (US);

Mauro Kobrinsky, Portland, OR (US);

Patrick Morrow, Portland, OR (US);

Chung-Hsun Lin, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/713 (2025.01);
Abstract

Substrate-less diode, bipolar and feedthrough integrated circuit structures, and methods of fabricating substrate-less diode, bipolar and feedthrough integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a semiconductor structure. A plurality of gate structures is over the semiconductor structure. A plurality of P-type epitaxial structures is over the semiconductor structure. A plurality of N-type epitaxial structures is over the semiconductor structure. One or more open locations is between corresponding ones of the plurality of gate structures. A backside contact is connected directly to one of the pluralities of P-type and N-type epitaxial structures.


Find Patent Forward Citations

Loading…