The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Apr. 01, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Abhishek Anil Sharma, Portland, OR (US);

Wilfred Gomes, Portland, OR (US);

Rajabali Koduri, Saratoga, CA (US);

Pushkar Ranade, San Jose, CA (US);

Sagar Suthram, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/412 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); H10B 10/125 (2023.02); H10B 10/18 (2023.02);
Abstract

Integrated circuits including static random-access memory (SRAM) bit-cells that are actively cooled to a low temperature (e.g., in the cryogenic range) where transistor drive currents become significantly increased and transistor leakage currents significantly reduced. With the drive current improvement, bit-cell capacitance may be reduced by defining narrower transistor fin structures and/or four transistor (4T) bit-cells may be implemented, for example with two parallel transistor fins and colinear gate electrodes.


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