The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
May. 19, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Sergey Voronin, Albany, NY (US);
Qi Wang, Albany, NY (US);
Hamed Hajibabaeinajafabadi, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H01J 37/32 (2006.01); H10P 34/42 (2026.01); H10P 50/24 (2026.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H10P 50/691 (2026.01); H01J 37/3244 (2013.01); H10P 34/42 (2026.01); H10P 50/242 (2026.01); H10P 72/0421 (2026.01); H01J 2237/3341 (2013.01);
Abstract
A method for manufacturing semiconductor devices is disclosed. The method includes providing, in a chamber, a substate covered by a patterned mask. The method includes applying, in the chamber, radiation locally on a portion of the substate that is not covered by the patterned mask. The method includes etching, in the chamber, the portion of the substate through a dry etching process.
Voronin, Sergey. (2026). Method for selective etching by local photon surface activation (U.S. Patent No. 12628594). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12628594
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile