The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Nov. 12, 2024
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Jeonghoon Jang, Hwaseong-si, KR;
Kikang Kim, Yongin-si, KR;
Youngmin Kim, Hwaseong-Si, KR;
Haein Kim, Hwaseong-Si, KR;
Jeunghoon Han, Yongin-si, KR;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/3065 (2006.01); H10P 14/60 (2026.01); H10P 14/694 (2026.01); H10P 50/24 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6336 (2026.01); C23C 16/345 (2013.01); C23C 16/45538 (2013.01); C23C 16/56 (2013.01); H10P 14/6339 (2026.01); H10P 14/69433 (2026.01); H10P 50/242 (2026.01);
Abstract
Provided is a method of processing a substrate in a reaction chamber, more particularly to a method of increasing a wet etch rate of SiCN layer in order to reduce an overhang from a SiCN layer formed on a stepped structure. The method comprises supplying a carbon-containing silicon source and a nitrogen gas simultaneously while applying a power, followed by performing a post treatment, wherein the wet etch rate of SiCN layer is modulated by the amount of nitrogen source supplied.