The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Nov. 04, 2021
Tokyo Electron Limited, Tokyo, JP;
Daniel Fulford, Cohoes, NY (US);
Jodi Grzeskowiak, Schenectady, NY (US);
H. Jim Fulford, Albany, NY (US);
Sean Smith, Cohasset, MA (US);
Partha Mukhopadhyay, Orlando, FL (US);
Michael Murphy, Albany, NY (US);
Anton Devilliers, Clifton Park, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of forming sub-resolution features that includes: exposing a photoresist layer formed over a substrate to a first ultraviolet light (UV) radiation having a first wavelength of 365 nm or longer through a mask configured to form features at a first critical dimension, the photoresist layer including first portions exposed to the first UV radiation and second portions unexposed to the first UV radiation after exposing with the first UV radiation; exposing the first portions and the second portions to a second UV radiation; and developing the photoresist layer after exposing the photoresist layer to the second UV radiation to form the sub-resolution features having a second critical dimension less than the first critical dimension.