The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Jul. 28, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Andrew M. Bayless, Boise, ID (US);

Cassie M. Bayless, Boise, ID (US);

Brandon P. Wirz, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/16 (2013.01); H01L 24/13 (2013.01); H01L 24/81 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13157 (2013.01); H01L 2224/13184 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13609 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13613 (2013.01); H01L 2224/13618 (2013.01); H01L 2224/1362 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/1369 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/81815 (2013.01);
Abstract

In some embodiments, an interconnection structure can electrically and physically couple a first semiconductor die and a second semiconductor die. The interconnection structure can include a first portion at the first semiconductor die and a second portion at the second semiconductor die. The first portion can include a first conductive pillar with a concave bonding surface, a first annular barrier layer, and a first annular solder layer. The first annular barrier layer can surround a sidewall of the first conductive pillar, and the first annular solder layer can surround the first barrier layer. The second portion can include a second conductive pillar having a convex bonding surface, the convex bonding surface coupled to the concave bonding surface. The second interconnection structure can further include a second annular solder layer surrounding a second annular barrier layer surrounding the second conductive pillar.


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