The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Jul. 26, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jen-Yuan Chang, Hsinchu City, TW;

Chia-Ping Lai, Hsinchu City, TW;

Chien-Chang Lee, Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 23/53266 (2013.01); H10D 1/042 (2025.01); H10D 1/716 (2025.01);
Abstract

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a capacitor device within a recessed portion of a substrate. The recessed portion has sidewalls and a bottom surface below a top surface of the substrate. The semiconductor structure includes a dielectric material disposed below the capacitor device and within the recessed portion. The semiconductor structure includes a first conductive structure adjacent one or more of the sidewalls of the recessed portion. The first conductive structure may include a conductive portion of the substrate or a conductive material disposed within the recessed portion. The semiconductor structure includes a second conductive structure coupled to the first conductive structure, where the second conductive structure provides an electrical connection from the first conductive structure to a voltage source or a voltage drain.


Find Patent Forward Citations

Chang, Jen-Yuan. (2026). Capacitor device and manufacturing method thereof (U.S. Patent No. 12616022). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12616022

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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