The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Feb. 22, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Su Chen Fan, Cohoes, NY (US);
Julien Frougier, Albany, NY (US);
Maruf Amin Bhuiyan, Albany, NY (US);
Pouya Hashemi, Purchase, NY (US);
Takashi Ando, Eastchester, NY (US);
Alexander Reznicek, Troy, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Provided is a stacked field-effect transistor (FET). The stacked FET comprises a top active region. The width of the top of the top active region is smaller than the width of bottom of the top active region. The stacked FET further comprises a top contact in direct contact with a top surface of the top active region. The stacked FET further comprises a bottom active region located substantially below the top active region. The stacked FET further comprises a bottom contact in direct contact with a top surface of the bottom active region. The bottom contact is wider at a top end than at a bottom end.