The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Jul. 07, 2020
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Yiting Sun, Leuven, BE;
David De Roest, Kessel-Lo, BE;
Daniele Piumi, Etterbeek, BE;
Ivo Johannes Raaijmakers, Almere, NL;
Bokheon Kim, San Jose, CA (US);
Timothee Blanquart, Oud-Heverlee, BE;
Yoann Tomczak, Leuven, BE;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); G03C 1/74 (2006.01); G03F 7/00 (2006.01); G03F 7/004 (2006.01); G03F 7/09 (2006.01); G03F 7/095 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); G03C 1/74 (2013.01); G03F 7/004 (2013.01); G03F 7/094 (2013.01); G03F 7/095 (2013.01); G03F 7/167 (2013.01); G03F 7/38 (2013.01); G03F 7/70033 (2013.01); H01L 21/31144 (2013.01);
Abstract
Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.