The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Mar. 20, 2023
International Business Machines Corporation, Armonk, NY (US);
Min Gyu Sung, Latham, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Julien Frougier, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chanro Park, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A three-dimensional semiconductor structure with a bottom electrode in an interlayer dielectric material. The bottom electrode material with a rectangular shape has a first notch is in a top portion of a portion of the bottom electrode material. The first notch occurs in an intersection of the bottom electrode material with a top electrode material. A dielectric material contacts the bottom electrode material and a top surface of the interlayer dielectric material. The dielectric material is between five sides of the bottom electrode material and the top electrode material in the intersection of the bottom electrode material with the top electrode material and has a large contact area with of the bottom electrode material and the top electrode. When the bottom electrode material is a word line and the top electrode material is a bit line, the three-dimensional structure is a ReRAM cross point cell.