The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Dec. 13, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Chen Zhang, Guilderland, NY (US);
Heng Wu, Guilderland, NY (US);
Julien Frougier, Albany, NY (US);
Alexander Reznicek, Troy, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10P 14/20 (2026.01); H10P 50/00 (2026.01); H10P 50/24 (2026.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/01318 (2026.01); H10D 84/0167 (2025.01); H10D 84/0177 (2025.01); H10D 84/038 (2025.01); H10P 14/3411 (2026.01); H10P 14/3452 (2026.01); H10P 50/242 (2026.01); H10P 50/691 (2026.01);
Abstract
A FET channel includes a stack of silicon nanosheets. The silicon nanosheets are oriented parallel to a planar portion of the FET in which the FET channel is formed. The FET channel also includes a vertical blocker fin. The vertical blocker fin is attached to at least one nanosheet in the stack of nanosheets.