Method and system for mitigating underlayer damage during formation of patterned structures

Abstract

Methods of forming structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a material overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period providing one or more of a nitrogen reactant and an oxygen reactant to the reaction chamber for a reactant pulse period, providing an inert gas to the reaction chamber for an inert gas pulse period, and providing a plasma power to form a plasma within the reaction chamber for a plasma pulse period. The inert gas can be provided during the plasma period and/or the plasma power can be pulsed to mitigate any damage to an underlying layer, while providing desired properties of the material layer.