Company Filing History:
Years Active: 2019
Title: Tomomi Takayama: Innovator in Silicon Nitride Film Technology
Introduction
Tomomi Takayama is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of materials science, particularly in the development of methods for forming silicon nitride films. Her innovative work has led to advancements in semiconductor manufacturing processes.
Latest Patents
Tomomi Takayama holds 1 patent for her invention titled "Methods for forming a silicon nitride film." This patent describes a plasma enhanced atomic layer deposition (PEALD) process that includes providing a substrate into a reaction chamber and performing at least one unit deposition cycle. The process involves contacting the substrate with a vapor phase reactant containing a silicon precursor and a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Furthermore, her methods also focus on improving the etch characteristics of silicon nitride films through post-deposition plasma treatment.
Career Highlights
Throughout her career, Tomomi has demonstrated a strong commitment to innovation in her field. Her work has not only contributed to the advancement of semiconductor technologies but has also positioned her as a key figure in research and development within her company.
Collaborations
Tomomi collaborates with talented professionals in her field, including Shinya Ueda and Taishi Ebisudani. These collaborations enhance the research environment and foster innovative solutions in semiconductor technology.
Conclusion
Tomomi Takayama's contributions to the development of silicon nitride film technologies exemplify her dedication to innovation and excellence in materials science. Her work continues to influence the semiconductor industry and inspire future advancements.