Asm IP Holding B.v.

Tomomi Takayama

Toshiya Suzuki

Shinya Ueda

Taishi Ebisudani

Tomohiro Kubota

Methods for forming a silicon nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a silicon precursor; and contacting the substrate with a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Methods for improving the etch characteristics of a silicon nitride film utilizing a post deposition plasma treatment are also provided.

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Tokyo, Japan

Tomomi Takayama