The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Jul. 12, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Torai Iwasa, Kurokawagun, JP;

Takehiro Tanikawa, Kurokawagun, JP;

Masaya Herai, Kurokawagun, JP;

Kazuki Oshima, Kurokawagun, JP;

Yuzuru Sakai, Kurokawagun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/32568 (2013.01); H01J 37/32091 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode disposed above the substrate support, a first RF signal generator coupled to the lower electrode and configured to generate a first RF signal, the first RF signal having a first power level during a first state in a repetition period, a second power level less than the first power level during a second state in the repetition period, and the second power level during a third state in the repetition period, and a second RF signal generator coupled to the lower electrode and configured to generate a second RF signal, the second RF signal having a third power level during the first state, a fourth power level greater than the third power level during the second state, and the third power level.


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