The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Feb. 08, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Hung Lin, Taichung City, TW;
Wei-Ming Wang, Taichung City, TW;
Su-Chun Yang, Hsinchu County, TW;
Jih-Churng Twu, Hsinchu County, TW;
Shih-Peng Tai, Xinpu Township, Hsinchu County, TW;
Kuo-Chung Yee, Taoyuan City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.