The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Apr. 19, 2024
Etron Technology, Inc., Hsinchu, TW;
Invention and Collaboration Laboratory Pte. Ltd., Singapore, SG;
Chao-Chun Lu, Taipei City, TW;
Weng-Dah Ken, Hsinchu City, TW;
Etron Technology, Inc., Hsinchu, TW;
Invention And Collaboration Laboratory Pte. Ltd., Singapore, SG;
Abstract
A transistor with low leakage currents includes a substrate, a gate, spacers, pad dielectric layers, a source, and a drain. The gate is formed above a gate dielectric layer, wherein the gate dielectric layer has a first dielectric constant. The spacers have a second dielectric constant. The pad dielectric layers are formed under the spacers and having a third dielectric constant. The source and the drain are adjacent to the spacers and in two opposite directions of the gate. The first dielectric constant, the second dielectric constant, and the third dielectric constant are different from each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile