The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Apr. 05, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 2213/74 (2013.01); G11C 2213/79 (2013.01);
Abstract
A memory device includes at least a non-volatile memory cell. The non-volatile memory cell includes a resistor with a variable resistance, a first transistor, and a second transistor that are coupled in series. The first transistor has a first threshold voltage and the second transistor has a second threshold voltage that is different from the first threshold voltage. The first and the second transistors have their channels doped in respective different concentrations.