The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Jul. 11, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A method for forming a three-dimensional memory device can include forming a staircase structure. An alternating layer stack is disposed and etched to form steps. A continuous layer disposed on the staircase structure continuously extends over the steps. An insulating layer is disposed on the continuous layer and a slit is formed extending through the staircase structure. The slit exposes sidewalls of the continuous layer and the steps. The sacrificial layer is removed and a cavity is formed in place of the continuous layer. An etch stop layer is disposed in the cavity and continuously extends over the steps. Openings are formed through the insulating layer and expose a portion of a lateral surface of the etch stop layer. The openings are extended through the etch stop layer to expose a lateral surface of each step of the steps. Contacts are formed in the openings.