The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

May. 20, 2020
Applicant:

Basf SE, Ludwigshafen am Rhein, DE;

Inventors:

Joannes Theodorus Valentinus Hoogboom, BP Eindhoven, NL;

Andreas Klipp, Ludwigshafen, DE;

Jhih Jheng Ke, Taoyuan, TW;

Che Wei Wang, Taoyuan, TW;

Chia Ching Ting, Taoyuan, TW;

Assignee:

BASF SE, Ludwigshafen am Rhein, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 3/30 (2006.01); C09K 13/00 (2006.01); C11D 3/00 (2006.01); C11D 3/20 (2006.01); C11D 3/28 (2006.01); C11D 3/34 (2006.01); C11D 3/39 (2006.01); C11D 3/395 (2006.01); C11D 7/32 (2006.01); C11D 7/50 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C11D 7/3281 (2013.01); C09K 13/00 (2013.01); C11D 3/0073 (2013.01); C11D 3/2041 (2013.01); C11D 3/28 (2013.01); C11D 3/30 (2013.01); C11D 3/3454 (2013.01); C11D 3/39 (2013.01); C11D 3/3902 (2013.01); C11D 3/395 (2013.01); C11D 7/3209 (2013.01); C11D 7/50 (2013.01); H01L 21/02057 (2013.01); C11D 2111/22 (2024.01);
Abstract

Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.


Find Patent Forward Citations

Hoogboom, Joannes Theodorus Valentinus. (2026). Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten (U.S. Patent No. 12590274). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12590274

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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