The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jun. 16, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chien-Han Chen, Nantou County, TW;
Hung-Chun Chen, Taipei, TW;
Yuan-Chun Chien, Taipei, TW;
Wei Tse Hsu, Hsinchu County, TW;
Yu-Yu Chen, Hsinchu, TW;
Chien-Chih Chiu, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device includes followings. A metal layer is formed to embedded in a first dielectric layer. An etch stop layer is formed over the metal layer and the first dielectric layer. A second dielectric layer is formed over the etch stop layer. A portion of the second dielectric layer is removed to expose a portion of the etch stop layer and to form a via by a dry etching process. The portion of the etch stop layer exposed by the second dielectric layer is removed to expose the metal layer and to form a damascene cavity by a wet etching process. A damascene structure is formed in the damascene cavity.