The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Nov. 12, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Krystelle Lionti, San Jose, CA (US);

Rudy J. Wojtecki, San Jose, CA (US);

Noel Arellano, Gilroy, CA (US);

Son Nguyen, Schenectady, NY (US);

Hosadurga Shobha, Niskayuna, NY (US);

Balasubramanian Pranatharthiharan, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/61 (2026.01); H10D 64/01 (2025.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H10D 64/01352 (2026.01); H10P 14/6339 (2026.01); H10P 14/69391 (2026.01); C23C 16/04 (2013.01); H10P 14/665 (2026.01);
Abstract

A method is presented for selective deposition on metals using porous low-k materials. The method includes forming alternating layers of a porous dielectric material and a first conductive material, forming a surface aligned monolayer (SAM) over the first conductive material, depositing hydroxamic acid (HA) material over the porous dielectric material, growing an oxide material over the first conductive material, removing the SAM, depositing a dielectric layer adjacent the oxide material, and replacing the oxide material with a second conductive material defining a bottom electrode.


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