The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Sep. 25, 2020
Asml Holding N.v., Veldhoven, NL;
Asml Netherlands B.v., Veldhoven, NL;
Tamer Mohamed Tawfik Ahmed Mohamed Elazhary, New Canaan, CT (US);
Robert John Socha, Campbell, CA (US);
Stephen Roux, New Fairfield, CT (US);
Simon Reinald Huisman, Eindhoven, NL;
ASML HOLDING N.V., Veldhoven, NL;
ASML NETHERLANDS B.V., Veldhoven, NL;
Abstract
A structure of a semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. The method for configuring a metrology mark may be used in a lithography process. The method may include determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.