The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Apr. 15, 2022
Applicant:

Ansys, Inc., Canonsburg, PA (US);

Inventors:

Jimin Wen, Pleasanton, CA (US);

Hsiming Pan, San Jose, CA (US);

Norman Chang, Fremont, CA (US);

Haiyang He, Washington, PA (US);

Mehdi Abarham, Belmont, CA (US);

Akhilesh Kumar, Milpitas, CA (US);

David Geb, Walnut Creek, CA (US);

Saeed Asgari, Westborough, MA (US);

Zhigang Feng, San Jose, CA (US);

Wenbo Xia, Milpitas, CA (US);

Viralkumar Girishchandra Gandhi, Nashua, NH (US);

Assignee:

ANSYS, INC., Canonsburg, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 30/20 (2020.01); G06F 17/12 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G06F 17/12 (2013.01); G06F 30/20 (2020.01); H01L 22/00 (2013.01);
Abstract

Methods and systems for improved simulation of thermal characterization and thermal modeling of devices, such as smart phones, are described. In one embodiment, a method can characterize center, edge, and corner thermal decay behavior at different locations on a simulated IC. For each location, near and far field thermal effects are captured at the same time. A simulation system can generate a steady state thermal decay curve for each selected location that shows how the temperature changes with distance to a heat source. The system can then use a set of location dependent thermal decay curves to compute, based on an inputted power profile for the IC, a steady state thermal profile of the IC.


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