The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Aug. 23, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Ryutaro Suda, Miyagi, JP;

Koki Tanaka, Miyagi, JP;

Ryu Nagai, Miyagi, JP;

Masahiko Yokoi, Miyagi, JP;

Ikko Tanaka, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32165 (2013.01); H01J 2237/334 (2013.01);
Abstract

An etching method includes providing a substrate on a substrate support in a chamber of a plasma processing apparatus. The etching method further includes etching the substrate with plasma generated in the chamber, thereby forming a recess in the substrate. In the etching, an electrical bias is supplied to the substrate support, to attract ions from the plasma into the substrate. In the etching, at least one of a bias frequency, which is a reciprocal of a time length of a waveform cycle of the electrical bias, and a pulse duty ratio of a pulsed electrical bias is modified to maintain an ion energy flux to the substrate.


Find Patent Forward Citations

Suda, Ryutaro. (2026). Etching method and plasma processing apparatus (U.S. Patent No. 12580154). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12580154

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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