The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Dec. 20, 2021
Intel Corporation, Santa Clara, CA (US);
Nazila Haratipour, Portland, OR (US);
Gilbert Dewey, Beaverton, OR (US);
I-Cheng Tung, Hillsboro, OR (US);
Nancy Zelick, Portland, OR (US);
Chi-Hing Choi, Portland, OR (US);
Jitendra Kumar Jha, Hillsboro, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Contact over active gate (COAG) structures with trench contact layers, and methods of fabricating contact over active gate (COAG) structures using trench contact layers, are described. In an example, an integrated circuit structure includes a gate structure. An epitaxial source or drain structure is adjacent to the gate structure. A conductive trench contact structure is on the epitaxial source or drain structure. The conductive trench contact structure includes a first planar layer on the epitaxial source or drain structure, a second planar layer on the first planar layer, and a conductive fill material on the second planar layer.