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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12557666 B1

PDFFull Text
Date of Patent:
Feb. 17, 2026

Filed:

Feb. 07, 2023

Method of manufacturing conductive structure, method of manufacturing redistribution circuit structure and method of manufacturing semiconductor package

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Liang Chang, Hsinchu, TW;

Ming-Che Ho, Tainan, TW;

Hung-Jui Kuo, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Michelle Mandala

Int. Cl.
CPC ...
H01L 21/48 (2006.01); C25D 3/38 (2006.01); C25D 7/12 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 21/486 (2013.01); C25D 3/38 (2013.01); C25D 7/123 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/162 (2013.01); H01L 25/165 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/182 (2013.01);
Abstract

A method including the following steps is provided. A seed layer is formed. Conductive material is formed on the seed layer by performing an electrolytic plating process with an electrolytic composition comprising: a source of copper ions; an accelerator agent; and a suppressor agent, by structure represented (1) or (2): wherein x is between 2 and 50, y is between 5 and 75, and R1 is an alkyl group of 1 to 3 carbon atoms. A portion of the seed layer exposed by the conductive material is removed.

Find Patent Forward Citations

Chang, Chung-Liang. (2026). Method of manufacturing conductive structure, method of manufacturing redistribution circuit structure and method of manufacturing semiconductor package (U.S. Patent No. 12557666). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12557666

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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