The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Jan. 05, 2023
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Chen-Liang Chu, Hsinchu, TW;
Chien-Chih Chou, New Taipei, TW;
Ta-Yuan Kung, New Taipei, TW;
Chun-Hsun Lee, Hsinchu, TW;
Chih-Wen Yao, Hsinchu, TW;
Yi-Huan Chen, Hsinchu, TW;
Ming-Ta Lei, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Transistors with improved saturation drain current and methods for making such transistors are disclosed. The gate is formed in the shape of a longitudinal trench and a plurality of lateral trenches below the longitudinal trench. The resulting dual-recess structure increases the surface area of the gate, which permits additional charge carriers and increases the saturation drain current of the transistor. Such transistors can be useful in high voltage and medium voltage applications such as in display driver integrated circuits.