The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Jun. 01, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Kisik Choi, Watervliet, NY (US);

Terence Hook, Jericho Center, VT (US);

Alexander Reznicek, Troy, NY (US);

Daniel Schmidt, Niskayuna, NY (US);

Tsung-Sheng Kang, Ballston Lake, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H01L 23/5286 (2013.01); H10D 30/014 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 89/611 (2025.01);
Abstract

A microelectronic structure including a nanosheet transistor that includes a source/drain. A frontside contact that includes a first section located on the frontside of the source/drain and a via section that extends to the backside of the nanosheet transistor. A shallow isolation layer located around a portion of the via section the first frontside contact. A backside metal line located on a backside surface of the via section and located on a backside surface of the shallow trench isolation layer. A dielectric liner located along a sidewall of the backside metal line and located along a bottom surface of the backside metal line.


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