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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12550619 B1

PDFFull Text
Date of Patent:
Feb. 10, 2026

Filed:

Apr. 21, 2022

Techniques for mram mtj top electrode connection

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Harry-Hak-Lay Chuang, Zhubei, TW;

Chen-Pin Hsu, Taoyuan, TW;

Hung Cho Wang, Taipei, TW;

Wen-Chun You, Dongshan Township, TW;

Sheng-Chang Chen, Hsinchu County, TW;

Tsun Chung Tu, Tainan, TW;

Jiunyu Tsai, Hsinchu, TW;

Sheng-Huang Huang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Eschweiler & Potashnik, LLC

Primary Examiner:

Steven B Gauthier

Assistant Examiner:

E. Rhett Cheek

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01F 10/32 (2006.01); H01F 41/32 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H01F 10/3259 (2013.01); H01F 41/32 (2013.01); H01L 21/76802 (2013.01); H01L 21/76819 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H10B 61/22 (2023.02); H10N 50/80 (2023.02);
Abstract

Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode. A sidewall spacer comprises a first spacer on the first sidewall of the top electrode and a second spacer on the second sidewall of the top electrode. A first surface of the first spacer comprises a first curve and a second surface of the second spacer comprises a second curve. A dielectric layer is around the MTJ and top electrode.

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