The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Jan. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Yi Huang, Taipei, TW;

Yu-Hung Lin, Taichung, TW;

Wei-Ming Wang, Taichung, TW;

Chen Chen, New Taipei, TW;

Shih-Peng Tai, Xinpu Township, TW;

Kuo-Chung Yee, Taoyuan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/304 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 21/3043 (2013.01); H01L 24/03 (2013.01); H01L 24/80 (2013.01); H01L 24/94 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0221 (2013.01); H01L 2224/03019 (2013.01); H01L 2224/03831 (2013.01); H01L 2224/0384 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80007 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.


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